Titanium Silicide Anneal Process Research for 14nm Finfet …
网页Titanium silicide (TiSix) is commonly used as S/D contact material in 14nm nodes because of its good thermal stability. In this study, soak anneal and millisecond anneal (MSA) as different titanium silicide (TiSix) formation processes are investigated in 14nm node both on blanket and pattern wafers.
Ti and NiPt/Ti liner silicide contacts for advanced technologies
网页2016年6月16日 · We discuss the transition to Ti based silicides for source-drain (SD) contacts for 3D FinFET devices starting from the 14nm node & beyond. Reductions in n-FET & p-FET contact resistances are reported with the optimization of metallization process & dopant concentrations.
Titanium Silicide Anneal Process Research for 14nm Finfet …
网页2020年6月26日 · In this paper, we review some of the advantages and disadvantages of nickel silicide as a material for the electrical contacts to the source, drain and gate of current and future CMOS devices.
Additional Siconi™ pre-clean for reliable TiSix contacts in …
网页2019年3月1日 · For CMOS image sensor, minimize the surrounding metal surface near the photo-diode detector requests a silicide-last integration: TiSi x contacts formed by annealing the Ti/TiN barrier. In this paper, the Siconi™ clean has been introduced before Ti/TiN deposition in different pre-clean sequences.
Thermal stability issue of ultrathin Ti-based silicide for its ...
网页2021年8月28日 · In this work, the thermal stability issue of ultrathin Ti-based silicide (TiSix) in prospective dynamic random access memory (DRAM) peripheral 3D FinFET transistors was systematically studied.
Highly-selective superconformai CVD Ti silicide process …
网页A competitive n-type CVD Ti/Si:P with a ρ c at 2.6×10 -9 Ω.cm 2 is measured. We demonstrate up to 90% superconformality for this process, with a tunnel silicidation at lengths up to 500nm, showing an exceptional selectivity to oxide.
(PDF) Advanced Metal Semiconductor Contacts for 14nm
网页2019年9月1日 · Since ρc of sub-10-8 Ω∙cm2 is required by the 14 nm CMOS technology and beyond, we first build test structures with high accuracy to measure the ultralow ρc. We investigate the factors that...
Ti and Co silicide phase formation and transformations on deep …
网页1998年1月5日 · This paper presents studies of phase formation and transformations for Ti and Co silicides on deep-sub-micron polycrystalline Si gates. Detailed kinetic studies of the high resistivity to low resistivity phase transformations ( TiSi 2 C49 to C54 and CoSi to CoSi 2 ) and their dependence on linewidth are presented.
网页the design guidelines for bulk FinFETs at the 14nm node, and compare bulk and SOI FinFETs in terms of scalability, parasitic capacitance, and heat dissipation. Decrease of the drain current by parasitic resistance in the source (S) and drain
Silicides and ohmic contacts - ScienceDirect
网页1998年2月1日 · This paper gives an overview of the scientific and technological aspects of silicides and ohmic contacts, including the electrical properties of metal-5 contacts, metal and siticlde deposition techniques, metal-Si reactions, silicide patterning processes, silicide stability, and device degradation due to silicides.